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Friday, August 7, 2020 | History

3 edition of Ferroelectric films found in the catalog.

Ferroelectric films

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Published by American Ceramic Society in Westerville, Ohio .
Written in English

    Subjects:
  • Ferroelectric thin films -- Congresses.

  • Edition Notes

    Statementedited by A.S. Bhalla and K.M. Nair.
    SeriesCeramic transactions ;, v. 25
    ContributionsBhalla, A. S., 1943-, Nair, K. M., American Ceramic Society. Meeting, Symposium on Ferroelectric Films (1991 : Cincinnati, Ohio)
    Classifications
    LC ClassificationsTA418.9.T45 F46 1992
    The Physical Object
    Paginationix, 469 p. :
    Number of Pages469
    ID Numbers
    Open LibraryOL1558921M
    ISBN 100944904475
    LC Control Number91039886

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device Format: Hardcover.   Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics are reviewed with the aim of providing an insight into different processes which may affect the behaviour of ferroelectric devices, such as ferroelectric .

    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. @article{osti_, title = {Nanomechanics of Ferroelectric Thin Films and Heterostructures}, author = {Li, Yulan and Hu, Shenyang Y. and Chen, L. Q.}, abstractNote = {The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability.

      Ferroelectric films can display a wide range of dielectric, ferroelectric, piezoelectric, electrostrictive, and pyroelectric properties. The potential utilization of these properties in a new generation of devices has driven the intensive studies on the synthesis, characterization, and determination of processing-microstructure-property relationships of ferroelectric thin films during Cited by: This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. Read more.


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Ferroelectric films Download PDF EPUB FB2

Abstract. The elastically driven, self-assembled polydomain nanostructures (elastic domains) in ferroelectric films are both scientifically intriguing and practically important, since the interfaces and long-range elastic and electric fields associated with the periodic nanoscale modulation in structure can endow unique and desirable physical properties to the ferroelectric films, including.

Purchase Nanostructures in Ferroelectric Films for Energy Applications - 1st Edition. Print Book & E-Book. ISBNThe past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices.

Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have Ferroelectric films book in use since.

The book contains theory and experimental data for a wide range of ferroelectric materials. Keywords Electro-Optic Devices Ferroelectric Nanocrystals Langmuir-Blodgett Films Mean-field Theory Microelectronic Sensors Perovskite Structure Pyroelectric Devices The First Principles Theory Thin Ferroelectric Films.

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators.

This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics.

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films.

This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Ferroelectric Thin Films. FE thin films enable the design of integrated circuits for nonvolatile random access memory (NVRAM), microelectromechanical (MEM) devices, and high-frequency electrical components that result from distortions programmed into the very crystalline structure of the dielectric material and are understood to be sensitive to the length scale [4,5].

25 rows    This unique combination of properties of ferroelectric materials has. The investigation of nanosized ferroelectric films and ferroelectric nanocrystals has attracted much attention during the past 15 – 20 years. There is interest in the fundamental and applied aspects.

The theoretical basis is connected with the development of the Landau-Ginzburg-Devonshire (LGD). Enhanced switchable ferroelectric polarization is achieved in doped hafnium oxide films grown directly onto silicon using low-temperature atomic. Recently, ferroelectric field effect transistor (FeFET) device architectures have been formed by using ferroelectric thin films as gate insulators because of the various advantages such as easily integrated structure, small cell sizes, low operating voltages, and nondestructive readout capability [14, 36].

The high ON/OFF ratio at zero gate Cited by: 2. More significantly, the ferroelectric thin film offers superior transverse piezoelectricity with an in-plane piezoelectric response of about 41 pC N –1, which is about twice that of well-known piezoelectric polymer PVDF (21 pC N –1).

Transverse piezoelectricity has been scarcely studied in molecular ferroelectrics, and its exploitation. Genre/Form: Conference papers and proceedings Cincinnati (Ohio, ) Congresses: Additional Physical Format: Online version: Ferroelectric films.

Westerville, Ohio:. Nanoscale Phenomena in Ferroelectric Thin Films (Multifunctional Thin Film Series) [Seungbum Hong] on *FREE* shipping on qualifying offers. Nanoscale Phenomena in Ferroelectric Thin Films (Multifunctional Thin Film Series)5/5(1). The last part gives a survey of state of the art applications using integrated piezo or/and ferroelectric films.

Reviews "While of course technical, the book is clearly written, well-illustrated, and includes chapter bibliographies." (Booknews, 1 June ) Author Bios. Emmanuel. In recent years, ferroelectric materials and thin films have attracted much attention and exhibited potential in many important applications such as dynamic random access memories (DRAMS) [5], non.

The present work reports for the first time, the employment of ferroelectric ZrO 2 films as energy storage capacitors utilized in pulsed power systems.

Furthermore, the effect of insertion of a low permittivity dielectric HfO 2:Al 2 O 3 (HAO) layer, with a thickness ranging from 2 to 8 nm, on the tunability of ferroelectric and energy storage characteristics of ZrO 2 films is assessed.

More importantly, the flexible HZO ferroelectric films maintain superior ferroelectricity, retention and fatigue endurance under multiple harsh conditions. On the basis of multi-service conditions, this work marks an important step in the development of new flexible HfO 2 -based ferroelectric memories from fundamental research to practical Author: Wen-Yan Liu, Jia-Jia Liao, Jie Jiang, Yi-Chun Zhou, Qiang Chen, Sheng-Tao Mo, Qiong Yang, Qiang-Xian.

We consider two cases: magnetic and ferroelectric films have the simple cubic lattice and the triangular lattice. In the two cases, magnetic films have Heisenberg spins interacting with each other via an exchange J and a DM interaction with the ferroelectric interface. The electrical polarizations of ±1 are assumed for the ferroelectric films.

The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties.

Ferroelectric Thin Films: Review of Materials, Properties and Applications Article (PDF Available) in Journal of Applied Physics (5) September with 3, Reads How we measure 'reads'.

Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume.

Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors.Ferroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field.

All ferroelectrics are pyroelectric, with the additional property that their natural electrical polarization is term is used in analogy to ferromagnetism, in which a material exhibits a permanent magnetic ferroelectric: non ferroelectric.